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| absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 26 i d @ v gs = 12v, t c = 100c continuous drain current 16 i dm pulsed drain current 104 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 26 a e ar repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction -55 to150 t stg storage temperature range c package mounting surface temperature 300 (for 5 sec) weight 2.6 (typical) g pre-irradiation international rectifier?s rad-hard tm hexfet ? technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. a radiation hardened power mosfet surface mount (smd-1) www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number irhn7250 100k rads (si) 0.1 ? 26a jansr2n7269u irhn3250 300k rads (si) 0.1 ? 26a jansf2n7269u irhn4250 500k rads (si) 0.1 ? 26a jansg2n7269u irhn8250 1000k rads (si) 0.1 ? 26a jansh2n7269u irhn7250 jansr2n7269u 200v, n-channel ref:mil-prf-19500/603 rad-hard ? hexfet ? technology smd-1 features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight esd rating: class 3a per mil-std-750, method 1020 pd-90679h 2 www.irf.com irhn7250, jansr2n7269u pre-irradiation note: corresponding spice and saber models are available on the international rectifier website. source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 26 i sm pulse source current (body diode) ? ? 104 v sd diode forward voltage ? ? 1.4 v t j = 25c, i s = 26a, v gs = 0v t rr reverse recovery time ? ? 820 ns t j = 25c, i f = 26a, di/dt 100a/ s q rr reverse recovery charge ? ? 12 c v dd 30v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.83 r thj-pcb junction-to-pc board ? 6.6 ? soldered to a 1 inch square clad pc board electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.27 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.10 ? v gs = 12v, i d =16a resistance ? ? 0.11 v gs = 12v, i d = 26a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.0 ? ? s v ds = 15v, i ds = 16a i dss zero gate voltage drain current ? ? 25 v ds = 160v ,v gs = 0v ? ? 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 170 v gs =12v, i d =26a q gs gate-to-source charge ? ? 30 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 60 t d (on) turn-on delay time ? ? 33 v dd = 100v, i d =26a t r rise time ? ? 140 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 140 t f fall time ? ? 140 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 4700 ? v gs = 0v, v ds = 25v c oss output capacitance ? 850 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 210 ? na nh ns a measured from the center of drain pad to center of source pad c/w www.irf.com 3 pre-irradiation irhn7250, jansr2n7269u table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100 k rads(si) 1 300k - 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 ? 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 25 ? 50 a v ds =160v, v gs = 0v r ds(on) static drain-to-source ? 0.100 ? 0.155 ? v gs = 12v, i d =16a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.100 ? 0.155 ? v gs = 12v, i d =16a on-state resistance (smd-1) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhn7250 (jansr2n7269u) 2. part numbers irhn3250 (jansf2n7269u), irhn4250 (jansg2n7269u) and irhn8250 (jansh2n7269u) fig a. typical single event effect, safe operating area v sd diode forward voltage ? 1.4 ? 1.4 v v gs = 0v, i s = 26a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. 0 50 100 150 200 0 -5 -10 -15 -20 vgs vds cu br table 2. typical single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28 285 43 190 180 170 125 ? br 36.8 305 39 100 100 100 50 ? 4 www.irf.com irhn7250, jansr2n7269u pre-irradiation post-irradiation fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure www.irf.com 5 pre-irradiation irhn7250, jansr2n7269u post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure fig 8a. gate stress of v gss equals 12 volts during radiation 6 www.irf.com irhn7250, jansr2n7269u pre-irradiation post-irradiation radiation characteristics fig 10. typical output characteristics post-irradiation 100k rads (si) fig 9. typical output characteristics pre-irradiation fig 11. typical output characteristics post-irradiation 300k rads (si) fig 12. typical output characteristics post-irradiation 1 mega rads (si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc www.irf.com 7 pre-irradiation irhn7250, jansr2n7269u radiation characteristics fig 15. typical output characteristics post-irradiation 300k rads (si) fig 16. typical output characteristics post-irradiation 1 mega rads (si) fig 13. typical output characteristics pre-irradiation fig 14. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 160 vdc 8 www.irf.com irhn7250, jansr2n7269u pre-irradiation www.irf.com 9 pre-irradiation irhn7250, jansr2n7269u ! ! " " " #$ 10 www.irf.com irhn7250, jansr2n7269u pre-irradiation $ v ds 90% 10% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % + - ' & ( )* " v gs www.irf.com 11 pre-irradiation irhn7250, jansr2n7269u q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 12 www.irf.com irhn7250, jansr2n7269u pre-irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l=1.48mh peak i l = 26a, v gs =12v i sd 26a, di/dt 190a/ s, v dd 200v, t j 150c footnotes: case outline and dimensions ? smd-1 p ad assignments ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 09/2014 |
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